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Room temperature ferromagnetism in Cd1-xCrxTe diluted magnetic semiconductor crystals

Identifieur interne : 000047 ( Main/Repository ); précédent : 000046; suivant : 000048

Room temperature ferromagnetism in Cd1-xCrxTe diluted magnetic semiconductor crystals

Auteurs : RBID : Pascal:14-0046480

Descripteurs français

Pascal (Inist)
- Température ambiante, Ferromagnétisme, Croissance cristalline en phase vapeur, Phase vapeur, Effet composition, Addition chrome, Caractéristique optique, Propriété optique, Propriété magnétique, Diffractométrie RX, Transition phase, Paramètre cristallin, Addition indium, Bande interdite, Vibration, Magnétomètre, Diffraction RX, Semiconducteur semimagnétique, Matériau cristallin, Structure blende, Tellurure de cadmium, Composé binaire, Matériau dopé, 7867, 7575, 6470N, 6322, CdTe.

English descriptors

KwdEn :
- Ambient temperature, Binary compounds, Blende structure, Cadmium tellurides, Chromium additions, Composition effect, Crystal growth from vapors, Crystalline material, Doped materials, Energy gap, Ferromagnetism, Indium additions, Lattice parameters, Magnetic properties, Magnetometers, Optical characteristic, Optical properties, Phase transitions, Semimagnetic semiconductors, Vapor phase, Vibrations, X ray diffractometry, XRD.

Abstract

Cd_1-xCr_xTe diluted magnetic semiconductor crystals were grown by vapor phase growth technique in the composition range of 0 ≤ x ≤ 0.05 and the effect of Cr doping on structural, morphological, optical and magnetic properties have been explored. X-ray diffraction analysis confirmed that all the grown crystals were zinc blende in structure without having any phase transition up to a Cr doping level of x=0.05. The lattice parameter decreased with increase in Cr doping level. Optical studies indicated that the optical band gap of the crystals decreased with the increase of Cr doping level. Magnetic properties were studied using vibrating sample magnetometer at room temperature and room temperature ferromagnetism was observed in all the Cr doped CdTe crystals.

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Pascal:14-0046480

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Room temperature ferromagnetism in Cd<sub>1-x</sub>
Cr<sub>x</sub>
Te diluted magnetic semiconductor crystals</title>
<author><name sortKey="Rigana Begam, M" uniqKey="Rigana Begam M">M. Rigana Begam</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Physics Division, School of Advanced Sciences, VIT University</s1>
<s2>Vellore 632014, Tamil Nadu</s2>
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<author><name sortKey="Madhusudhana Rao, N" uniqKey="Madhusudhana Rao N">N. Madhusudhana Rao</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Physics Division, School of Advanced Sciences, VIT University</s1>
<s2>Vellore 632014, Tamil Nadu</s2>
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<author><name sortKey="Kaleemulla, S" uniqKey="Kaleemulla S">S. Kaleemulla</name>
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<author><name sortKey="Krishnaiah, G" uniqKey="Krishnaiah G">G. Krishnaiah</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, S.V.A. Government College (M)</s1>
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<author><name sortKey="Subrahmanyam, J" uniqKey="Subrahmanyam J">J. Subrahmanyam</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, N.B.K.R. S&A College</s1>
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<seriesStmt><idno type="ISSN">1369-8001</idno>
<title level="j" type="abbreviated">Mater. sci. semicond. process.</title>
<title level="j" type="main">Materials science in semiconductor processing</title>
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<term>Binary compounds</term>
<term>Blende structure</term>
<term>Cadmium tellurides</term>
<term>Chromium additions</term>
<term>Composition effect</term>
<term>Crystal growth from vapors</term>
<term>Crystalline material</term>
<term>Doped materials</term>
<term>Energy gap</term>
<term>Ferromagnetism</term>
<term>Indium additions</term>
<term>Lattice parameters</term>
<term>Magnetic properties</term>
<term>Magnetometers</term>
<term>Optical characteristic</term>
<term>Optical properties</term>
<term>Phase transitions</term>
<term>Semimagnetic semiconductors</term>
<term>Vapor phase</term>
<term>Vibrations</term>
<term>X ray diffractometry</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Température ambiante</term>
<term>Ferromagnétisme</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Phase vapeur</term>
<term>Effet composition</term>
<term>Addition chrome</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
<term>Propriété magnétique</term>
<term>Diffractométrie RX</term>
<term>Transition phase</term>
<term>Paramètre cristallin</term>
<term>Addition indium</term>
<term>Bande interdite</term>
<term>Vibration</term>
<term>Magnétomètre</term>
<term>Diffraction RX</term>
<term>Semiconducteur semimagnétique</term>
<term>Matériau cristallin</term>
<term>Structure blende</term>
<term>Tellurure de cadmium</term>
<term>Composé binaire</term>
<term>Matériau dopé</term>
<term>7867</term>
<term>7575</term>
<term>6470N</term>
<term>6322</term>
<term>CdTe</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Cd<sub>1-x</sub>
Cr<sub>x</sub>
Te diluted magnetic semiconductor crystals were grown by vapor phase growth technique in the composition range of 0 ≤ x ≤ 0.05 and the effect of Cr doping on structural, morphological, optical and magnetic properties have been explored. X-ray diffraction analysis confirmed that all the grown crystals were zinc blende in structure without having any phase transition up to a Cr doping level of x=0.05. The lattice parameter decreased with increase in Cr doping level. Optical studies indicated that the optical band gap of the crystals decreased with the increase of Cr doping level. Magnetic properties were studied using vibrating sample magnetometer at room temperature and room temperature ferromagnetism was observed in all the Cr doped CdTe crystals.</div>
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Cr<sub>x</sub>
Te diluted magnetic semiconductor crystals</s1>
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<fA11 i1="01" i2="1"><s1>RIGANA BEGAM (M.)</s1>
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<fA11 i1="03" i2="1"><s1>KALEEMULLA (S.)</s1>
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<s2>Vellore 632014, Tamil Nadu</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Department of Physics, S.V.A. Government College (M)</s1>
<s2>Srikalahasti 517644, A.P.</s2>
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<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Physics, N.B.K.R. S&A College</s1>
<s2>Vidyanagar 524414, A.P.</s2>
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<fA21><s1>2014</s1>
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<fC01 i1="01" l="ENG"><s0>Cd<sub>1-x</sub>
Cr<sub>x</sub>
Te diluted magnetic semiconductor crystals were grown by vapor phase growth technique in the composition range of 0 ≤ x ≤ 0.05 and the effect of Cr doping on structural, morphological, optical and magnetic properties have been explored. X-ray diffraction analysis confirmed that all the grown crystals were zinc blende in structure without having any phase transition up to a Cr doping level of x=0.05. The lattice parameter decreased with increase in Cr doping level. Optical studies indicated that the optical band gap of the crystals decreased with the increase of Cr doping level. Magnetic properties were studied using vibrating sample magnetometer at room temperature and room temperature ferromagnetism was observed in all the Cr doped CdTe crystals.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E50P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A10B</s0>
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<fC02 i1="03" i2="3"><s0>001B70H67</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70E75</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
</fC03>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
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<s5>09</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Magnetic properties</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Diffractométrie RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>X ray diffractometry</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Difractometría RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Transition phase</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Phase transitions</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Transición fase</s0>
<s5>11</s5>
</fC03>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Lattice parameters</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>13</s5>
</fC03>
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<s5>13</s5>
</fC03>
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<s5>14</s5>
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<s5>14</s5>
</fC03>
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<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Vibrations</s0>
<s5>15</s5>
</fC03>
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<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Magnetometers</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>XRD</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Semiconducteur semimagnétique</s0>
<s5>22</s5>
</fC03>
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<s5>22</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>23</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Structure blende</s0>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Blende structure</s0>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Estructura blenda</s0>
<s5>24</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>Tellurure de cadmium</s0>
<s2>NK</s2>
<s5>25</s5>
</fC03>
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<s2>NK</s2>
<s5>25</s5>
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<s5>26</s5>
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<s5>46</s5>
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<s5>46</s5>
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<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>7575</s0>
<s4>INC</s4>
<s5>57</s5>
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<fC03 i1="26" i2="3" l="FRE"><s0>6470N</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>6322</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>CdTe</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé II-VI</s0>
<s5>18</s5>
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<s5>18</s5>
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<s5>18</s5>
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<fN21><s1>055</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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Room temperature ferromagnetism in Cd1-xCrxTe diluted magnetic semiconductor crystals

Room temperature ferromagnetism in Cd1-xCrxTe diluted magnetic semiconductor crystals

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